Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures
نویسندگان
چکیده
Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures. VC 2011 American Institute of Physics. [doi:10.1063/1.3598137]
منابع مشابه
Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InxGa1−xN/GaN multiple and single quantum wells
We have examined in detail the optical properties and carrier capture dynamics of coupled InxGa1−xN/GaN multiple and single quantum well MQW and SQW structures that possess various numbers of QWs in the confinement region adjacent to a SQW. The aim is to study the influence of the structure of an InGaN MQW confinement region on carrier transfer and collection into a coupled SQW. By applying in ...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملQuantum dot emission from site-controlled InGaN/GaN micropyramid arrays
InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by ...
متن کاملInGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
Epitaxial lateral overgrowth of gallium nitride with 1 1 2̄ 2 facets was realized by metal organic chemical vapor deposition on GaN/ sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate ...
متن کاملINFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS
We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...
متن کامل